Webn-SiGeC on 3 µm high p-SiGeC on the 200 nm Si buffer layer; the active cooling layer of this leg is the top 1.1 µm n-SiGeC layer. In a typical bias condition to achieve cooling, no current will flow through the p-layer of this leg. The other leg consists of 2.6 µm p-SiGeC mesa on the 200 nm Si buffer. WebIn SiGeC layers, the active boron concentration was obtained from the strain compensation. It was also found that the boron atoms have a tendency to locate at substitutional sites …
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