WebInternal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The gettering efficiency of low carbon silicon has been found to be greatly enhanced with ramped annealing by creating a high concentration of oxygen precipitates and related defects. This ramped low carbon … WebNov 1, 2016 · The factors on gettering effectiveness are studied, including the fabrication procedures and the structures of the polysilicon passivating contact. The research …

Gettering in silicon photovoltaics: A review - ScienceDirect

Web杨 捷， 叶启亮， 张 虹， 黄一鸣， 温 涛， 郭长娟 (华南师范大学化学与环境学院, 广州市能源转化与储能材料重点实验室，广州 510006)  WebNov 1, 2016 · Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer J. Appl. Phys. (1993) There are more references available in the full text version of this article. Cited by (4) Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique terraces at maplewood

Modeling of heterogeneous precipitation of iron in silicon

WebThe model proposed here accurately describes the internal gettering behavior of Fe at both low and practical temperatures by considering the nucleation of iron silicide on the oxygen precipitates. Our model also explains how the gettering behavior is influenced by the product of NRo at low temperature and by the product of NRo3 at high ... WebGettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Gettering … WebThe present invention provides a method for producing a silicon wafer, which comprises growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 25 ppma and doped with nitrogen by the Czochralski method, processing the silicon single crystal ingot into a wafer, and … triclinic axial angles